In this paper, the simultaneous measurement of out-of-plane
thermal diffusivity and effective infrared absorption coefficient of an IR
semi-transparent GaAs wafer using infrared lock-in thermography technique (LIT)
is presented. The method relies on analysis of the generated LIT phase images
recorded at different modulation frequencies, using the thermal wave model in
the transmission configuration. The out-of-plane thermal diffusivity and
effective infrared absorption coefficient are estimated from the best fit of
the theoretical model to the experimental data. The obtained values are in good
agreement with those obtained by supplementary measurement using the modulated
photothermal infrared radiometry technique (PTR) in the reflection mode, and
also with data reported in the literature. In addition, simple modification of
the LIT experiment set up allows one to determinate the in-plane thermal
diffusivity of n-GaAs wafer. It was found that in-plane and out-of-plane
thermal diffusivities of the GaAs wafer are very close, as expected, within the
limit of measurement errors. The results show that the LIT technique in
transmission configuration can provide spatial information about both the
(effective) infrared absorption coefficient and thermal diffusivity of
semiconductor crystals.
Source:IOPscience
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