We have developed a wafer-scale
layer-transfer technique for transferring GaAs and Ge onto Si wafers of up to
300 mm in diameter. Lattice-matched GaAs or Ge layers were epitaxially grown on
GaAs wafers using an AlAs release layer, which can subsequently be transferred
onto a Si handle wafer via direct wafer bonding and patterned epitaxial
lift-off (ELO). The crystal properties of the transferred GaAs layers were
characterized by X-ray diffraction (XRD), photoluminescence, and the quality of
the transferred Ge layers was characterized using Raman spectroscopy. We find
that, after bonding and the wet ELO processes, the quality of the transferred
GaAs and Ge layers remained the same compared to that of the as-grown epitaxial
layers. Furthermore, we realized Ge-on-insulator and GaAs-on-insulator wafers
by wafer-scale pattern ELO technique.
Source:IOPscience
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