Xiamen PowerwayAdvanced material Co.,Ltd. Offer GaAs wafer, please see GaAs
wafer specification as follows:
GaAs epi ready
polished wafer:
Growth method
|
LEC or VGF
|
Diameter ( mm )
|
2”, 3”, 4”, 6”
|
Thickness ( um )
|
350 ~ 625
|
Conductivity
|
Semi-conducting or
Semi-insulating
|
Conductivity type
|
N – type, P - type
|
Dopant available
|
Silicon , Tellurium
, Zinc , Undoped
|
Orientation
|
(100) , (111) , (110),(211)
|
Off orientation
|
From 2° to 10° off
|
TTV
|
<15um
|
TIR
|
<10um
|
Bow
|
<10um
|
Warp
|
<10um
|
Flat options
|
EJ or US SEMI. Std .
|
Surface finish
|
One side or two
sides polished
|
Grade
|
Epi polished grade ,
mechanical grade
|
Package method
|
Single wafer
container with outer foil bag
|
Please visit: http://www.powerwaywafer.com/GaAs-Epiwafer.html
GaAs based LED
wafer
Please visit: http://www.powerwaywafer.com/GaAs-Epiwafer.html
Related
Products gaas epi wafer gaas si wafer bonding gaas wafer cleaning gaas wafer bonding gaas wafer thickness |
If you
need more information about GaAs wafer, please visit our website: http://www.powerwaywafer.com
or send us email to powerwaymaterial@gmail.com.
No comments:
Post a Comment