A Frank-type stacking fault bounded by a partial dislocation, about a few nanometers in size, was observed in a commercial GaAs:Si wafer (with the Si concentration of 
) annealed at the temperature of about 950 K, by cross-sectional scanning tunneling microscopy. There existed no charge around the stacking fault, unlike in heavily Si-doped GaAs. There was a localized energy level associated with the stacking fault, as expected theoretically in the pure stacking fault in which Si atoms do not exist.
) annealed at the temperature of about 950 K, by cross-sectional scanning tunneling microscopy. There existed no charge around the stacking fault, unlike in heavily Si-doped GaAs. There was a localized energy level associated with the stacking fault, as expected theoretically in the pure stacking fault in which Si atoms do not exist.Keywords
- Stacking faults;
- Si-doped GaAs;
- Cross-sectional scanning tunneling microscopy
- SOURCE:SCIENCEDIRECT
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