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Xiamen PowerwayAdvanced material Co.,Ltd. Offer GaAs wafer, please see GaAs wafer specification as follows:

GaAs epi ready polished wafer:


Growth method
LEC or VGF
Diameter ( mm )
2” 3” 4” 6”
Thickness ( um )
350 ~ 625
Conductivity
Semi-conducting or Semi-insulating
Conductivity type
N – type, P - type
Dopant available
Silicon , Tellurium , Zinc , Undoped
Orientation
100 , 111 , 110,211
Off orientation
From 2° to 10° off
TTV
<15um
TIR
<10um
Bow
<10um
Warp
<10um
Flat options
EJ or US SEMI. Std .
Surface finish
One side or two sides polished
Grade
Epi polished grade , mechanical grade
Package method
Single wafer container with outer foil bag


GaAs based LED wafer

Please visit: http://www.powerwaywafer.com/GaAs-Epiwafer.html

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If you need more information about GaAs wafer, please visit our website: http://www.powerwaywafer.com or send us email to  powerwaymaterial@gmail.com.

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