Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process

The integration of III–V semiconductors (e.g., GaAs and GaN) and silicon-on-insulator (SOI)-CMOS on a 200 mm Si substrate is demonstrated. The SOI-CMOS donor wafer is temporarily bonded on a Si handle wafer and thinned down. A second GaAs/Ge/Si substrate is then bonded to the SOI-CMOS-containing handle wafer. After that, the Si from the GaAs/Ge/Si substrate is removed. The GaN/Si substrate is then bonded to the SOI–GaAs/Ge-containing handle wafer. Finally, the handle wafer is released to realize the SOI–GaAs/Ge/GaN/Si hybrid structure on a Si substrate. By this method, the functionalities of the materials used can be combined on a single Si platform.

Source:IOPscience

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Direct-bonded four-junction GaAs solar cells*

Direct wafer bonding technology is able to integrate two smooth wafers and thus can be used in fabricating III–V multijunction solar cells with lattice mismatch. In order to monolithically interconnect between the GaInP/GaAs and InGaAsP/InGaAs subcells, the bonded GaAs/InP heterojunction must be a highly conductive ohmic junction or a tunnel junction. Three types of bonding interfaces were designed by tuning the conduction type and doping elements of GaAs and InP. The electrical properties of p-GaAs (Zn doped)/n-InP (Si doped), p-GaAs (C doped)/n-InP (Si doped) and n-GaAs (Si doped)/n-InP (Si doped) bonded heterojunctions were analyzed from the I–V characteristics. The wafer bonding process was investigated by improving the quality of the sample surface and optimizing the bonding parameters such as bonding temperature, bonding pressure, bonding time and so on. Finally, GaInP/GaAs/InGaAsP/InGaAs 4-junction solar cells have been prepared by a direct wafer bonding technique with the high efficiency of 34.14% at the AM0 

Source:IOPscience

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Doubly passively Q-switched Nd:GGG laser with a monolayer graphene saturable absorber and GaAs wafer

A doubly passively Q-switched Nd:GGG laser with monolayer graphene and GaAs wafer working as saturable absorbers is presented, in which the GaAs wafer also works as the output coupler. At the maximum incident pump power of 7.69 W, the obtained output power, the pulse duration and the pulse repetition rate are 820 mW, 1.06 ns, and 21.5 kHz, respectively, corresponding to pulse energy of 38.2 μJ and peak power of 35.9 kW, respectively.

Source:IOPscience

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Interfacial and mechanical characterization of wafer-bonded GaSb/amorphous α-(Ga,As)/GaAs structure for GaSb-on-insulator applications

In this study, the feasibility of using wafer-bonding technology to fabricate a GaSb semiconductor on GaAs substrates for potentially creating a GaSb-on-insulator structure has been demonstrated. A GaSb wafer has been bonded on two types of GaAs substrates: (1) a regular single crystal semi-insulating GaAs substrate and (2) the GaAs wafers with pre-deposited low-temperature amorphous α-(Ga,As) layers. The microstructures and interface adhesion studies have been carried out on these wafer-bonded semiconductors. It has been found that the GaSb-on-α-(Ga,As) wafers have shown enhanced interface adhesion and lower temperature bonding capability.

Source:IOPscience
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