Saddle-Type Bow of As-Cut GaAs Wafers

Bow of as-cut GaAs wafers sliced by internal diameter diamond saw was studied. The crystals used were [001]-oriented GaAs grown by LEC technique. It was found that the bow of all wafers was a saddle type independent of doped impurities (undoped, Si-doped and Cr-doped). The form of saddle is related to particular crystal orientations of the zinc blende structure.

Source:IOPscience

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Mapping of GaAs and Si wafers and ion-implanted layers by light-induced scattering and absorption of IR light

The methods of light-induced absorption and diffraction have been used to investigate the uniformity of Si and GaAs wafers and ion-implanted Si. Metastable annealing of defects, lifetime modification by swirl and radiation defects and anomalous depth penetration of ion-implantation-created defects have been demonstrated in Si. The mapping of GaAs wafers has been performed with picosecond and nanosecond light pulses and light absorption mechanisms are discussed.

Source:IOPscience

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send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com