Apr 24, 2018

Optical Characterization of InGaAs Quantum Wells after InP–GaAs Low-Temperature Wafer Bonding

The low-temperature wafer bonding of InGaAs/InP and GaAs was carried out at 200°C. The optical characteristic of lattice-matched InGaAs quantum wells (QWs) grown on an InP substrate which was bonded to a GaAs layer was investigated by measuring photoluminescence (PL) spectra at 77 K. After bonding, neither wavelength shift nor degradation of full-width at half maximum (FWHM) was observed. This implies that the bonding temperature of 200°C is sufficiently low to preserve the quality of InGaAs QWs. The low-temperature wafer bonding method is very attractive to realize optically pumped long-wavelength vertical cavity surface emitting lasers (VCSELs) and high power lasers.

Source:IOPscience

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Apr 4, 2018

Wafer-bonded coupled multilayer cavity with InAs quantum dots for two-color emission

A GaAs/AlAs coupled multilayer cavity structure with InAs quantum dots (QDs) was fabricated by wafer-bonding of two cavity structures grown individually. The wafer-bonding technique is important to control the spatial distribution of nonlinear polarization for strong terahertz emission by the differential frequency generation of the two cavity modes of the coupled cavity. Three layers of self-assembled InAs QDs were inserted in a cavity grown on a (001) GaAs substrate as optical gain materials for two-color emission of the cavity mode lights. The other cavity with a GaAs cavity layer was grown on a (113)B GaAs substrate. Two-color emissions with a 3.8 THz frequency difference were successfully observed from the wafer-bonded coupled cavity by cw optical pumping at room temperature.

Source:IOPscience

For more information, please visit our website: www.semiconductorwafers.net,
send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com