Apr 24, 2018

Optical Characterization of InGaAs Quantum Wells after InP–GaAs Low-Temperature Wafer Bonding

The low-temperature wafer bonding of InGaAs/InP and GaAs was carried out at 200°C. The optical characteristic of lattice-matched InGaAs quantum wells (QWs) grown on an InP substrate which was bonded to a GaAs layer was investigated by measuring photoluminescence (PL) spectra at 77 K. After bonding, neither wavelength shift nor degradation of full-width at half maximum (FWHM) was observed. This implies that the bonding temperature of 200°C is sufficiently low to preserve the quality of InGaAs QWs. The low-temperature wafer bonding method is very attractive to realize optically pumped long-wavelength vertical cavity surface emitting lasers (VCSELs) and high power lasers.


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