May 8, 2018

Characterization of EL2 in GaAs wafers by scanning isothermal transient spectroscopy

The authors have developed a novel scanning deep level transient spectroscopy system based on laser-excited junction capacitance or current transient measurements under isothermal conditions (scanning isothermal transient spectroscopy or SICTS). By applying the system to the measurement of deep levels in GaAs, they have successfully obtained precise information on the spatial distribution of EL2 in n-type GaAs wafers.


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