We
demonstrated an experiment of femtosecond-laser damage threshold on GaAs wafer,
the damage threshold was measured from 50 to 400fs. The mechanism was discussed
through injection power, pulse duration and ablation profile. The results
showed that the damage threshold increased with the pulse duration, the
relationship between diameter of ablation hole and laser power density was also
analyzed. It was concluded that the main factor affecting the damage threshold
was photon ionization and collision ionization.
Source:
Chao Yang Li
If you need more information about The Study of Femto-Second Laser Induced Damage Threshold on Semi-Insulating GaAs Wafer, please visit our website:http://www.powerwaywafer.com or send us email to powerwaymaterial@gmail.com.
Borgata Hotel Casino & Spa - JTR Hub
ReplyDeleteLocated in Atlantic casino-roll.com City, Borgata gri-go.com Hotel Casino https://octcasino.com/ & Spa offers goyangfc the finest in amenities and entertainment. It 출장안마 also provides a seasonal outdoor swimming