The causes of micro- and macro-irregularities observed on GaAs(100) polished wafers were investigated. From the results, the wafer processes were improved so that a high-quality surface was obtained without orange peel, haze, or pits. For 3-inch wafers the flatness was improved to less than 2 μm in TTV and the warp to less than 5 μm. Improvements in the wafer processes were: development of a better polishing solution, filtering of this solution with maintenance of the pad conditions, thereby eliminating scratches, annealing at high temperature to eliminate pits, advances in slicing and lapping to reduce warp, and three-stage double-sided polishing to eliminate dimples and to improve TTV.
Journal of Crystal Growth
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