May 28, 2019

Surface and optical characteristics of polycrystalline GaN layer with different pores profile of porous GaAs/GaAs substrate

This work investigated the influence of pores profile of a porous GaAs or GaAs substrate on surface and optical characteristics of an over-deposited GaN layer. Different pores profile of the porous GaAs/GaAs substrate was introduced by varying the DMF concentration of 50%, 75% and 90%. The pores distribution is more uniform, while the pores size is bigger with higher DMF concentration. In contrast, the pores depth is less deep when the DMF concentration was higher than 75%. Next, the GaN layer was deposited onto the porous GaAs/GaAs substrate using an e-beam evaporator system, followed by thermal annealing in ammonia ambient. It was found that the porous GaAs/GaAs substrate, etched by the DMF concentration above 75% gave lower surface roughness to the polycrystalline GaN layer although the surface morphology showed no significant changes. XRD measurement showed on non-porous substrate favoured hexagonal growth in the polycrystalline GaN layer. Instead, the porous GaAs/GaAs substrate favoured the cubic growth, especially the porous GaAs/GaAs substrate etched by 75% DMF concentration. Moreover, the GaN layer on the porous GaAs/GaAs substrate etched by 75% DMF concentration showed the smallest FWHM of NBE peak emission, while exhibited a relaxation level closer to a reported stress-free bulk GaN, as compared to other samples. After all, the porous GaAs/GaAs substrate, etched by 75% DMF concentration has improved the surface and optical characteristics of the layer due to its better porosity.


Source:IOPscience

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May 23, 2019

Nanoepitaxy of GaAs on a Si(001) substrate using a round-hole nanopatterned SiO2 mask

GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si substrate with SiO2 as a mask. The threading dislocations, which are stacked on the lowest energy facet plane, move along the SiO2 walls, reducing the number of dislocations. The etching pit density of GaAs on the 55 nm round-hole patterned Si substrate is about 3.3 × 105 cm−2. Compared with the full width at half maximum measurement from x-ray diffraction and photoluminescence spectra of GaAs on a planar Si(001) substrate, those of GaAs on the 55 nm round-hole patterned Si substrate are reduced by 39.6 and 31.4%, respectively. The improvement in material quality is verified by transmission electron microscopy, field-emission scanning electron microscopy, Hall measurements, Raman spectroscopy, photoluminescence, and x-ray diffraction studies.



Source:IOPscience

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May 16, 2019

Temperature dependent angular dispersions of surface acoustic waves on GaAs

We measure the phase velocities of surface acoustic waves (SAWs) propagating at different crystal orientations on (001)-cut GaAs substrates and their temperature dependance. We design and fabricate sets of interdigital transducers (IDTs) to induce 4 μm SAWs via the inverse piezoelectric (PZE) effect between the PZE [110] direction (set as θ = 0°) and the non-PZE [100] direction (θ = 45°) on GaAs. We also prepare ZnO film sputtered GaAs substrates in order to launch SAWs efficiently by IDTs even in the non-PZE direction. We quantify acoustic velocities between 1.4 and 300 K from the resonant frequencies in the S 11 parameter using a network analyzer. We observe parabolic velocity–temperature trends at all θ-values both on GaAs and ZnO/GaAs substrates. Below 200 K, in ZnO/GaAs substrates slower SAW modes appear around the [110] direction, which are unseen at RT.



Source:IOPscience


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May 9, 2019

In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: electronic and electric structures

The electronic structure of single-crystal (In)GaAs deposited with tri-methylaluminum (TMA) and water via atomic layer deposition (ALD) is presented with high-resolution synchrotron radiation core-level photoemission and capacitance-voltage (CV) characteristics. The interaction of the precursor atoms with (In)GaAs is confined at the topmost surface layer. The Ga-vacant site on the GaAs(111)A-2 × 2 surface is filled with Al, thereby effectively passivating the As dangling bonds. The As-As dimers on the GaAs(001)-2 × 4 surface are entirely passivated by one cycle of TMA and water. The presumed layerwise deposition fails to happen in GaAs(001)-4 × 6. In In0.20Ga0.80As(001)-2 × 4, the edge row As atoms are partially bonded with the Al, and one released methyl then bonds with the In. It is suggested that the unpassivated surface and subsurface atoms cause large frequency dispersions in CV characteristics under the gate bias. We also found that the (In)GaAs surface is immune to water in ALD. However, the momentary exposure of it to air (less than one minute) introduces significant signals of native oxides. This indicates the necessity of in situ works of high κ/(In)GaAs-related experiments in order to know the precise interfacial atomic bonding and thus know the electronic characteristics. The electric CV measurements of the ALD-Al2O3 on these (In)GaAs surfaces are correlated with their electronic properties.


Source:IOPscience

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