Highlights
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- This paper investigates the moisture failure acceleration factors for a GaAs pHEMT process
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- The activation energy Ea and the moisture accelerating factor n were extracted
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- Ea and n were shown to be different from those previously reported for Si devices and for another GaAs pHEMT process
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- The impact of bias was studied and incorporated into a humidity-induced failure model containing Vgs dependence
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- The failure mode was studied and reported as a transistor failure due to corrosion of the contacts
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- Comparison between THB and HAST testing was made for different processes
Abstract
This paper investigates the moisture failure acceleration factors for a GaAs pHEMT process. The activation energy Ea and the moisture accelerating factor n were extracted and were shown to be different from those previously reported for Si devices and for another GaAs pHEMT process. The impact of bias was studied and a humidity-induced semiconductor failure model, incorporating bias acceleration, was proposed.
Keywords
- GaAs;
- pHEMT;
- HAST;
- THB;
- Moisture;
- Humidity
- SOURCE:Sciencedirector
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