Mar 21, 2014

The Study of Femto-Second Laser Induced Damage Threshold on Semi-Insulating GaAs Wafer

We demonstrated an experiment of femtosecond-laser damage threshold on GaAs wafer, the damage threshold was measured from 50 to 400fs. The mechanism was discussed through injection power, pulse duration and ablation profile. The results showed that the damage threshold increased with the pulse duration, the relationship between diameter of ablation hole and laser power density was also analyzed. It was concluded that the main factor affecting the damage threshold was photon ionization and collision ionization.

Source: Chao Yang Li

If you need more information about The Study of Femto-Second Laser Induced Damage Threshold on Semi-Insulating GaAs Wafer, please visit our website:http://www.powerwaywafer.com or send us email to powerwaymaterial@gmail.com.

1 comment:

  1. Borgata Hotel Casino & Spa - JTR Hub
    Located in Atlantic casino-roll.com City, Borgata gri-go.com Hotel Casino https://octcasino.com/ & Spa offers goyangfc the finest in amenities and entertainment. It 출장안마 also provides a seasonal outdoor swimming

    ReplyDelete