Thermal management of high-power
semiconductor lasers is of great importance since the output power and beam
quality are affected by the temperature rise of the gain region. Thermal
simulations of a vertical-external-cavity surface-emitting laser by a
finite-element method showed that the solder layer between the semiconductor
thin film consisting of the gain region and a heat sink has a strong influence
on the thermal resistance and direct bonding is preferred to achieve effective
heat dissipation. To realize thin-film semiconductor lasers directly bonded on
a high-thermal-conductivity substrate, surface-activated bonding using an argon
fast atom beam was applied to the bonding of gallium arsenide wafer (GaAs) and
silicon carbide (SiC) wafers. The GaAs/SiC structure was demonstrated in the
wafer scale (2 in. in diameter) at room temperature. The cross-sectional
transmission electron microscopy observations showed that void-free bonding
interfaces were achieved.
Source:IOPscience
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