The selection of appropriate characterization
methodologies is vital for analyzing and comprehending the sources of defects
and their influence on the properties of heteroepitaxially grown III–V layers.
In this work, we investigate the structural properties of GaAs layers grown by
metal-organic vapour phase epitaxy on Ge substrates—(1 0 0) with 6° offset
towards 〈1 1 1〉—under various growth conditions. Synchrotron x-ray
topography is employed to investigate the nature of extended linear defects
formed in GaAs epilayers. Other x-ray techniques, such as reciprocal space
mapping and triple axis ω-scans of (0 0 l)-reflections (l = 2, 4, 6), are used
to quantify the degree of relaxation and presence of antiphase domains (APDs)
in the GaAs crystals. The surface roughness is found to be closely related to
the size of APDs formed at the GaAs/Ge heterointerface, as confirmed by x-ray
diffraction (XRD), as well as atomic force microscopy and transmission electron
microscopy.
Source:IOPscience
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