GaAs films with low-temperature GaAs
(LT-GaAs) layers were grown by molecular beam epitaxy (MBE) method on vicinal
(001) Si substrates oriented 6° off towards [110]. The grown structures were
different with the thickness of LT-GaAs layers and its arrangement in the film.
The processes of epitaxial layers nucleation and growth were controlled by
reflection high energy electron diffraction (RHEED) method. Investigations of
crystalline properties of the grown structures were carried out by the methods
of X-ray diffraction (XRD) and transmission electron microscopy (TEM). The
crystalline perfection of the GaAs films with LT-GaAs layers and the GaAs films
without ones was comparable. It was found that in the LT- GaAs/Si layers the
arsenic clusters are formed, as it occurs in the LT-GaAs/GaAs system without
dislocation. It is shown that large clusters are formed mainly on the
dislocations. However, the clusters have practically no effect on the density
and the propagation path of threading dislocations. With increasing thickness
of LT-GaAs layer the dislocations are partly bent along the LT-GaAs/GaAs
interface due to the presence of stresses.
Source:IOPscience
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