This paper presents heterogeneously
integrated bow-tie emitter–detector photoconductive antennas (PCAs) based on
low-temperature grown-gallium arsenide (LTG-GaAs) thin-film devices on
silicon-dioxide/silicon (SiO2/Si) host substrates for integrated terahertz
(THz) systems. The LTG-GaAs thin-film devices are fabricated with standard
photolithography and thermal evaporation of metal-contact layers of chromium
(Cr), nickel (Ni) and gold (Au). They are etched selectively and separated from
their growth GaAs substrate. The LTG-GaAs thin-film devices are then
heterogeneously integrated on bow-tie antenna electrodes patterned on the
surface of a SiO2/Si host substrate for THz emitters and THz detectors.
Cost-effective and selective integration of LTG-GaAs thin-film devices on a Si
platform is demonstrated. THz radiation from the fabricated THz PCAs is
successfully measured using a pump–probe THz time-domain configuration. The THz
temporal duration was measured at full width half maximum of 0.36 ps. Its
frequency spectrum exhibits a broadband response with a peak resonant frequency
of about 0.31 THz. The demonstration illustrates the feasibility of creating
heterogeneously integrated THz systems using separately optimized LTG-GaAs
devices and Si based electronics.
Source:IOPscience
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