We present the nanoheteroepitaxial growth of
gallium arsenide (GaAs) on nano-patterned silicon (Si) (001) substrates
fabricated using a CMOS technology compatible process. The selective growth of
GaAs nano-crystals (NCs) was achieved at 570 °C by MOVPE. A detailed structure
and defect characterization study of the grown nano-heterostructures was
performed using scanning transmission electron microscopy, x-ray diffraction,
micro-Raman, and micro-photoluminescence (μ-PL) spectroscopy. The results show
single-crystalline, nearly relaxed GaAs NCs on top of slightly, by the SiO2-mask
compressively strained Si nano-tips (NTs). Given the limited contact area,
GaAs/Si nanostructures benefit from limited intermixing in contrast to planar
GaAs films on Si. Even though a few growth defects (e.g. stacking faults,
micro/nano-twins, etc) especially located at the GaAs/Si interface region were
detected, the nanoheterostructures show intensive light emission, as
investigated by μ-PL spectroscopy. Achieving well-ordered high quality GaAs NCs
on Si NTs may provide opportunities for superior electronic, photonic, or
photovoltaic device performances integrated on the silicon technology platform.
Source:IOPscience
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