We report a growth phenomenon where uniform
gallium arsenide (GaAs) islands were found to grow underneath an ordered
array of SiO2 nanodisks on a GaAs(100) substrate. Each island eventually
grows into a pyramidal shape resulting in the toppling of the supported
SiO2 nanodisk. This phenomenon occurred consistently for each nanodisk
across a large patterned area of ~ 50 ×50 µm2 (with nanodisks of
210 nm diameter and 280 nm spacing). The growth mechanism is
attributed to a combination of 'catalytic' growth and facet formation.
Source:IOPscience
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