GaAs-based In0.83Ga0.17As photodetectors
(PDs) with cut-off wavelengths up to 2.6 µm are demonstrated. The effects of
continuously-graded or fixed-composition InAlAs buffers on the device
performances are investigated. The dark current characteristics of the PDs at
various temperatures are analysed in detail. The photocurrents are also
measured at 300 K; the detectivity of the PDs is extracted. The two GaAs-based
PDs with different buffer schemes show different temperature-dependent dark
current behaviours. The around room temperature performances of the GaAs-based
device on the fixed-composition buffer are not as good, but comparable to those
of InP-based devices, revealing a promising candidate for the GaAs-based PDs
and focal plane arrays for many low-end applications.
Source:IOPscience
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