We systematically investigated the
correlation between morphological and optical properties of InGaAs
self-assembled quantum dots (QDs) grown by solid-source molecular beam epitaxy
on GaAs (n 11)B (n = 9, 8, 7, 5, 3, 2) substrates. Remarkably, all InGaAs QDs
on GaAs(n 11)B under investigation show optical properties superior to those
for ones on GaAs(100) as regards the photoluminescence (PL) linewidth and
intensity. The morphology for growth of InGaAs QDs on GaAs (n 11)B, where n =
9, 8, 7, 5, is observed to have a rounded shape with a higher degree of lateral
ordering than that on GaAs(100). The optical property and the lateral ordering
are best for QDs grown on a (511)B substrate surface, giving a strong
correlation between lateral ordering and PL optical quality. Our results
demonstrate the potential for high quality InGaAs QDs on GaAs(n 11)B for
optoelectronic applications.
Source:IOPscience
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