In this work GaAs nanowires were grown by
self-assisted growth method with completely identical growth parameters, such
as growth temperature, growth time, Ga and As flux, on GaAs (111)B and Si (111)
substrates using Molecular Beam Epitaxy (MBE). All samples were then
characterized by Scanning Electron Microscope (SEM), Energy-dispersive X-ray
spectroscopy (EDX), and X-ray Diffraction (XRD). The results from both
substrates were compared in order to understand the effect of substrate type on
nanowires.
Source:IOPscience
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