Thick orientation-patterned growth of GaP on wafer-fused GaAs templates by hydride vapor phase epitaxy for frequency conversion
Successful heteroepitaxial growth of OPGaP on OPGaAs templates by HVPE.
First ever demonstration to produce 300 µm thick OPGaP layer on OPGaAs templates.
The quality of the commercially available GaP wafers is not a hindrance to further develop QPM devices.
The wafer fusion process is a viable and economical approach to produce OPGaAs templates.
OPGaP QPM devices are better suited for frequency conversion using the 1–2 µm pump sources because of smaller 2 PA in GaP.
The lack of absorption feature in the 2–4 µm range associated with n-doping GaP is a promising result for OPGaP growth.
Quasi-phase-matched (QPM) GaP layers up to 300 μm thick have been produced by low-pressure hydride vapor phase epitaxy (LP-HVPE) overgrowth on orientation-patterned GaAs (OPGaAs) templates fabricated using a wafer-fusion bonding technique. The growth on the OPGaAs templates resulted in up to 200 μm thick vertically propagating domains, with a total GaP thickness of 300 μm. The successful thick growth on OPGaAs templates is the first step towards solving the material problems associated with unreliable material quality of commercially available GaP wafers and making the whole process of designing QPM frequency conversion devices molecular beam epitaxy free and more cost-effective.
Hydride vapor phase epitaxy;
Nonlinear optical materials
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