A structure of gallium antimonide (GaSb) and gallium arsenide (GaAs) wafers is built to modulate light reflectivity at CO2 laser wavelength. A quantum well composed of GaSb/GaAs heterojunction with highly doped GaAs up to 3×1018 cm-3 is inserted inside a layer structure. A grating of periodic structure of GaAs and gold layer is added just below the substrate. Gsolver software is used to determine the reflectivity of incident light with the existence of free carriers. A voltage is applied to the doped layer to deplete the free electrons and the reflectivity is determined again. The significant difference in reflectivity between the two cases can be used to build a light reflectivity modulator device.
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