The photo-carrier radiometry (PCR) technique has been applied to a semi-insulating GaAs wafer for the detection and identification of radiative defects. Due to the ultrafast free carrier recombination lifetime, the conventional carrier-diffusion-wave-based PCR theory was modified to reflect the signal domination by trap emission and capture rates in the absence of diffusion. Defect photoluminescence with photon energies from 0.7 to 1.24 eV was collected and analyzed using photo-thermal temperature spectra and resonant (rate-window) detection combined with frequency scans. Five defect levels were identified self-consistently from the combined rate-window and PCR phase data, and the temperature dependence of the defect photoluminescence quantum efficiency was determined through multi-parameter best fits of the PCR rate theory to the experimental data.
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