Doubly passively Q-switched Nd:GGG laser with a monolayer graphene saturable absorber and GaAs wafer
A doubly passively Q-switched Nd:GGG laser with monolayer graphene and GaAs wafer working as saturable absorbers is presented, in which the GaAs wafer also works as the output coupler. At the maximum incident pump power of 7.69 W, the obtained output power, the pulse duration and the pulse repetition rate are 820 mW, 1.06 ns, and 21.5 kHz, respectively, corresponding to pulse energy of 38.2 μJ and peak power of 35.9 kW, respectively.
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