Highlights
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- We report wafer bonding (WB) techniques giving good ohmic interfaces of GaAs/Si.
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- WB with a low bonding temperature and short processing time was performed.
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- We demonstrated the GaAs solar cell on Si substrate by WB techniques.
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- Fabricated GaAs solar cell on Si exhibited a comparable performance with that on GaAs.
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- We proved the feasibility of stable WB technologies of GaAs/Si substrates.
Abstract
In this work, we developed wafer bonding techniques to bond GaAs and Si wafers. Wafer bonding was carried out at room temperature without high temperature annealing processes. The bonded interface showed a low interface resistance of 8.8×10−3 Ω cm2. We also exploited the new bonding techniques to fabricate a GaAs solar cell on a Si substrate. The solar cell showed a high energy conversion efficiency (13.25%) even without an anti reflection coating. The performance of the fabricated GaAs/Si solar cell was comparable to that of a homogeneous GaAs solar cell grown on a GaAs substrate. *Corresponding author.
Keywords
- Wafer bonding;
- GaAs on Si;
- GaAs solar cell;
- GaAs/Si
- SOURCE:SCIENCEDIRECT
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