Source:Journal of Crystal Growth
Feb 7, 2014
State of the art 6″ SI GaAs wafers made of conventionally grown LEC-crystals
6″ SI GaAs single crystals are grown by the standard LEC-process in a new-generation multi-heater puller designed for charges up to 50 kg and crucibles up to 12″, applying the carbon controlled growth technology. It is demonstrated that the increasing requirements of device manufacturers with regard to macroscopic and mesoscopic homogeneity of electrical properties, mechanical strength, flatness and cleanliness of the wafers can be fully met by LEC grown 6″ crystals.