Jan 13, 2014

Thermal processing induced plastic deformation in GaAs wafers

Different types of dislocation bundles were identified in the (001) GaAs substrates of III–V heterostructures. Comparisons of scanning infrared polariscopy images and X-ray transmission topograms showed a one to one correlation of stripes of reduced residual shear strain and dislocation bundles of the majority type. Visible-light interferometry and Makyoh topography, on the other hand, showed a slip-line distribution that is in correspondence to the distribution of dislocation bundles of the minority type(s). A new model for the plastic deformation of circular GaAs wafers during thermal processing is briefly outlined and its good agreement with the main experimental results demonstrated.

Source:Materials Science and Engineering: B

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