The surface quality is crucial for growth of epitaxial layers
on III–V semiconductor substrates. In this work the procedures of epi-ready
semi-insulating (SI) GaAs wafer preparation were developed. The atomic force
microscopy (AFM), triple crystal X-ray diffraction (TCD) and X-ray
photoelectron spectroscopy (XPS) were used to monitor morphology and
composition of substrates with different chemical treatment history. We propose
an optimised epi-ready SI GaAs wafer preparation procedure involving NH4OH:H2O2:H2O/NaOCl:H2O2:H2O
etching/polishing.
Source:
Vacuum
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epi-ready semi-insulating GaAs wafer preparation procedure, please visit our
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